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IXTA3N100P

MOSFET 3 Amps 1000V 4.8 Rds

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SeekIC No. : 00154355 Detail

IXTA3N100P: MOSFET 3 Amps 1000V 4.8 Rds

IXTA3N100P Data Sheet

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Part Number:
IXTA3N100P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Continuous Drain Current : 3 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 4.8 Ohms


Parameters:

Technical/Catalog InformationIXTA3N100P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.8 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA3N100P
IXTA3N100P



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