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IXTA2N80

MOSFET 2 Amps 800V 6.2 Rds

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SeekIC No. : 00154253 Detail

IXTA2N80: MOSFET 2 Amps 800V 6.2 Rds

IXTA2N80 Data Sheet

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Part Number:
IXTA2N80
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 6.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263AA Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 2 A
Package / Case : TO-263AA
Resistance Drain-Source RDS (on) : 6.2 Ohms


Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
    - easy to drive and to protect
· Fast switching times


Application

· Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 800
800		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 2
8		 A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C		 2
6
200		 A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 18 Ω		 5 V/ns
PD TC = 25°C 54 w
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   4 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s		 300 °C



Parameters:

Technical/Catalog InformationIXTA2N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs6.2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max54W
PackagingBulk
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA2N80
IXTA2N80



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