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SeekIC No. : 00154146 Detail

IXTA2N100P: MOSFET 2 Amps 1000V 7.5 Rds

IXTA2N100P Data Sheet

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Part Number:: IXTA2N100P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	2 A
Resistance Drain-Source RDS (on) :	7.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Continuous Drain Current : 2 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 7.5 Ohms

Parameters:

Technical/Catalog Information	IXTA2N100P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	655pF @ 25V
Power - Max	86W
Packaging	Tube
Gate Charge (Qg) @ Vgs	24.3nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA2N100P IXTA2N100P

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