MOSFET 1 Amps 1200V 20 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1 A | ||
Resistance Drain-Source RDS (on) : | 20 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Tube |
Technical/Catalog Information | IXTA1N120P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25° C | 1A |
Rds On (Max) @ Id, Vgs | 20 Ohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
Power - Max | 63W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 17.6nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTA1N120P IXTA1N120P |