MOSFET 1.5 Amps 1000V 11 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 1.5 A | ||
Resistance Drain-Source RDS (on) : | 11 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AA | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1000 1000 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM |
TC = 25°C TC = 25°C, pulse width limited by TJM |
21 84 |
A A |
IAR EAR EAS |
TC = 25°C TC = 25°C |
1.5 6 200 |
A mJ mJ |
dv/dt | IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 18 Ω |
3 | V/ns |
PD | TC = 25°C | 500 | w |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque | 1.13/10 | Nm/lb.in. |
Weight | 4 | g | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |
Technical/Catalog Information | IXTA1N100 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Rds On (Max) @ Id, Vgs | 11 Ohm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
Power - Max | 54W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 14.5nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTA1N100 IXTA1N100 |