IXTA10P50P Selling Leads, Price trend , Ixys, IXTA10P50P DataSheet download, circuit diagram from SeekIC.com

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IXTA10P50P: MOSFET -10.0 Amps -500V 1.000 Rds

IXTA10P50P Data Sheet

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Part Number:: IXTA10P50P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 500 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 1 Ohms
Drain-Source Breakdown Voltage : - 500 V

Parameters:

Technical/Catalog Information	IXTA10P50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2840pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA10P50P IXTA10P50P

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IXTA10P50P

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