Features: · IGBT with NPT (non punch through) structure· reverse blocking capability independent from gate voltage- function of series diode monolithically integrated- no external series diode required- soft reverse recovery· positive temperature coefficient of saturation voltage- optimum current ...
IXRH50N60: Features: · IGBT with NPT (non punch through) structure· reverse blocking capability independent from gate voltage- function of series diode monolithically integrated- no external series diode requi...
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Features: SpecificationsDescription The IXRH50N120 is designed as IGBT with reverse blocking capab...
Symbol Conditions Maximum Ratings |
VCES TVJ = 25°C to 150°C IXRH 50N80 ±800 V IXRH50N60 ±600 V |
VGES ± 20 V |
IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A |
ICM VGE = 0/15 V; RG = 22 W; TVJ = 125°C 80 A VCEK RBSOA, Clamped inductive load; L = 100 H 500 V |
Ptot TC = 25°C 300 W |