Features: SpecificationsDescription The IXRH50N120 is designed as IGBT with reverse blocking capability. Its typical applications converters requiring reverse blocking capability which include current source inverters, matrix converters, bi-directional switches, resonant converters, induction heat...
IXRH50N120: Features: SpecificationsDescription The IXRH50N120 is designed as IGBT with reverse blocking capability. Its typical applications converters requiring reverse blocking capability which include curre...
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The IXRH50N120 is designed as IGBT with reverse blocking capability. Its typical applications converters requiring reverse blocking capability which include current source inverters, matrix converters, bi-directional switches, resonant converters, induction heating, auxiliary switches for soft switching and in the main current path.
The IXRH50N120 has four features. The first one is IGBT with NPT (non punch through) structure. The next one is that it would have reverse blocking capability independent from gate voltage which means function of series diode monolithically integrated, no external series diode required and soft reverse recovery. The next one is that it would have positive temperature coefficient of saturation voltage which means optimum current distribution when paralleled. The last one is that its epoxy of TO 247 package meets UL 94V-0. That are all the main features.
Some absolute maximum ratings of IXRH50N120 have been concluded into several points as follow. The first one is about its Vces at Tvj = 25°C to 150°C which would be ±1200V. The second one is about its Vges which would be ±20V. The next one is about its Ic25 at Tc = 25°C which would be 60A. The next one is about its Ic90 at Tc = 90°C which would be 40A. The next one is about its Icm at Vge = 0/15 V; Rg = 22 W; Tvj = 125°C which would be 80A. The next one is about its Vcek at RBSOA, clamped inductive load; L = 100 H which would be 500V. The next one is about its Ptot at Tc = 25°C which would be 300W.
Also there are some characteristics about IXRH50N120 . The first one is about its Vge(th) which would be min 4V and max 8V with condition of Ic=2mA, Vge = Vce. The next one is about its Iges which would be max 500nA with condition of Vce = 0 V and Vge= ± 20 V. And so on. For more information please contact us.