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IXRH40N120

IGBT Transistors 40 Amps 1200V

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SeekIC No. : 00143942 Detail

IXRH40N120: IGBT Transistors 40 Amps 1200V

IXRH40N120 Data Sheet

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Part Number:
IXRH40N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.7 V Maximum Gate Emitter Voltage : 20 V
Gate-Emitter Leakage Current : 500 nA Power Dissipation : 300 W
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Gate-Emitter Leakage Current : 500 nA
Power Dissipation : 300 W
Collector-Emitter Saturation Voltage : 2.7 V


Parameters:

Technical/Catalog InformationIXRH40N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)55A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-247
Packaging*
Other Names IXRH40N120
IXRH40N120



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