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IXFT58N20

MOSFET 58 Amps 200V 0.08W Rds

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SeekIC No. : 00159270 Detail

IXFT58N20: MOSFET 58 Amps 200V 0.08W Rds

IXFT58N20 Data Sheet

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Part Number:
IXFT58N20
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 58 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.04 Ohms


Parameters:

Technical/Catalog InformationIXFT58N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs40 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs220nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT58N20
IXFT58N20



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