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IXFT10N100

MOSFET 10 Amps 1000V 1.2 Rds

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SeekIC No. : 00159220 Detail

IXFT10N100: MOSFET 10 Amps 1000V 1.2 Rds

IXFT10N100 Data Sheet

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Part Number:
IXFT10N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

 International standard package
Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
   - easy to drive and to protect
 Fast intrinsic Rectifier


Application

 DC-DC converters
 Synchronous rectification
 Battery chargers
Switched-mode and resonant-mode power supplies
 DC choppers
AC motor control
 Temperature and lighting controls
 Low voltage relays


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS= 1 M		  
1000
1000
V
V
VGS
VGSM		 Continuous
Transient		  
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
10N100
12N100
10N100
12N100
10N100
12N100
10
12
40
48
10
12
A
A
A
A
A
A

EAR
TC = 25°C
30
mJ


dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2		  
5
V/ns
PD TC = 25°C  
300
W

TJ
TJM
Tstg

  
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s  
300

°C

Md Mounting torque  
1.13/10
Nm/lb.in.
Weight
TO-268 = 6 g



Parameters:

Technical/Catalog InformationIXFT10N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT10N100
IXFT10N100



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