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IXFT 28N50F

Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifierApplication· DC-DC converters· Switched-mode and resonant-mode power supplies, >500kHz switchin...

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SeekIC No. : 004381565 Detail

IXFT 28N50F: Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifi...

IXFT 28N50F Data Sheet

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Part Number:
IXFT 28N50F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

· RF capable MOSFETs
· Double metal process for low gate resistance
· Unclamped Inductive Switching (UIS) rated
· Low package inductance - easy to drive and to protect
· Fast intrinsic rectifier


Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· 13.5 MHz industrial applications
· Pulse generation
· Laser drivers
· RF amplifiers


Specifications

Symbol
Test conditions
Maximum
ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
28
112
28
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
35
1.5
mJ
J
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
10
V/ns
PD
TC = 25°C
315
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mounting torque TO-247
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g



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