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IXFT30N60Q

MOSFET 30 Amps 600V 0.23W Rds

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SeekIC No. : 00154169 Detail

IXFT30N60Q: MOSFET 30 Amps 600V 0.23W Rds

IXFT30N60Q Data Sheet

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Part Number:
IXFT30N60Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.23 Ohms
Packaging : Box


Parameters:

Technical/Catalog InformationIXFT30N60Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs240 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4000pF @ 25V
Power - Max500W
PackagingBulk
Gate Charge (Qg) @ Vgs82nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT30N60Q
IXFT30N60Q



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