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IXFT12N90Q

MOSFET 12 Amps 900V 0.9 Ohm Rds

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SeekIC No. : 00158265 Detail

IXFT12N90Q: MOSFET 12 Amps 900V 0.9 Ohm Rds

IXFT12N90Q Data Sheet

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Part Number:
IXFT12N90Q
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 900 V
Package / Case : PLUS 247
Resistance Drain-Source RDS (on) : 0.9 Ohms


Parameters:

Technical/Catalog InformationIXFT12N90Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs900 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT12N90Q
IXFT12N90Q



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