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IXFT12N100Q

MOSFET 12 Amps 1000V

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SeekIC No. : 00158372 Detail

IXFT12N100Q: MOSFET 12 Amps 1000V

IXFT12N100Q Data Sheet

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Part Number:
IXFT12N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.05 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-268


Features:

·IXYS advanced low Qg process
·Low gate charge and capacitances
- easier to drive
- faster switching
·International standard packages
·Low RDS (on)
·Unclamped Inductive Switching (UIS) rated
·Molding epoxies meet UL 94 V-0 flammability classification


Application

·Easy to mount
·Space savings
·High power density


Parameters:

Technical/Catalog InformationIXFT12N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs1.05 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT12N100Q
IXFT12N100Q



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