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IXFR 26N50

Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation -Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<50pF)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive...

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IXFR 26N50: Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation -Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<50pF)• L...

IXFR 26N50 Data Sheet

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Part Number:
IXFR 26N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Silicon chip on Direct-Copper-Bond substrate
  - High power dissipation
  - Isolated mounting surface
  - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control


Specifications

Symbol Test Conditions    
VDSS TJ = 25 to 150 500 V
VDGR TJ = 25 to 150; RGS = 1 M 500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25 26 A
IDM TC = 25, Pulse width limited by TJM 104 A
IAR TC = 25 26 A
EAR TC = 25 30 mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 2 		5 V/ns
PD TC = 25 250 W
TJ   -55 ... +150
TJM   150
Tstg   -55 ... +150
TL 1.6 mm (0.063 in.) from case for 10 s 300
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight   6 g



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