Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<25pF)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductiv...
IXFR 180N10: Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation• Low drain to tab capacitance(<25pF)• ...
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation -Isolated ...
Symbol | Test Conditions | ||
VDSS | TJ = 25 to 150 | 100 | V |
VDGR | TJ = 25 to 150; RGS = 1 M | 100 | V |
VGS | Continuous | ±20 | V |
VGSM | Transient | ±30 | V |
ID25 | TC = 25 (MOSFET chip capability) | 165 | A |
ID(RMS) | External lead (current limit) | 76 | A |
IDM | TC = 25, Note 1 | 720 | A |
IAR | TC = 25 | 180 | A |
EAR | TC = 25 | 60 | mJ |
EAS | TC = 25 | 3 | J |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150, RG = 2 |
5 | V/ns |
PD | TC = 25 | 400 | W |
TJ | -55 ... +150 | ||
TJM | 150 | ||
Tstg | -55 ... +150 | ||
TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | |
VISOL | 50/60 Hz, RMS t = 1 min | 2500 | V~ |
Weight | 5 | g |