Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability12N100 10 A10N100 9 A IDM TC = 25°C, pulse width limited by TJM 12N10040 A 10N10048 A IAR TC = 25°C12N100 12 A 10N10...
IXFR 10N100F: Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability12N100 10 A10N100 9 A ...
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation -Isolated ...
VDSS TJ = 25°Cto 150°C 1000 V |
VDGR TJ = 25°C to 150°C; RGS = 1 M 1000 V |
VGS Continuous ±20 V |
VGSM Transient ±30 V |
ID25 TC = 25°C, Chip capability 12N100 10 A |
IDM TC = 25°C, pulse width limited by TJM 12N100 40 A 10N100 48 A |
IAR TC = 25°C 12N100 12 A 10N100 10 A |
EAR TC = 25°C 64 mJ |
EAS TC = 25°C 6 J |
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 5 V/ns TJ 150°C, RG = 2 |
PD TC = 25°C 700 W |
TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C |
VISOL 50/60 Hz, RMS t = 1 min 2500 V~ IISOL 1 mA t = 1 s 3000 V~ |
Md Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.5/13 Nm/lb.in. |
Weight 30 g |