MOSFET 90 Amps 200V 0.025 Rds
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
Packaging : | Box |
Technical/Catalog Information | IXFR90N20Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | - |
Rds On (Max) @ Id, Vgs | - |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | - |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | - |
Package / Case | ISOPLUS247? |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFR90N20Q IXFR90N20Q |