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IXFR80N20Q

MOSFET 80 Amps 200V 0.03 Rds

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SeekIC No. : 00159263 Detail

IXFR80N20Q: MOSFET 80 Amps 200V 0.03 Rds

IXFR80N20Q Data Sheet

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Part Number:
IXFR80N20Q
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 71 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : ISOPLUS 247
Continuous Drain Current : 71 A


Parameters:

Technical/Catalog InformationIXFR80N20Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C71A
Rds On (Max) @ Id, Vgs28 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 4600pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR80N20Q
IXFR80N20Q



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