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IXFR66N50Q2

MOSFET 50 Amps 500V

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SeekIC No. : 00164396 Detail

IXFR66N50Q2: MOSFET 50 Amps 500V

IXFR66N50Q2 Data Sheet

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Part Number:
IXFR66N50Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.074 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.074 Ohms


Parameters:

Technical/Catalog InformationIXFR66N50Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs85 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 9125pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR66N50Q2
IXFR66N50Q2



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