MOSFET 18 Amps 1000V 0.5 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 0.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS 247 | Packaging : | Tube |
Symbol | Test Conditions | Maximum Ratings | |
VDSS VDGR |
TJ = 25 to 150 TJ = 25 to 150; RGS = 1 M |
1000 1000 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 ID(RMS) IDM IAR |
TC = 25 (MOSFET chip capability) External lead (current limit) TC = 25, Note 1 TC = 25 |
19 84 21 21 |
A A A A |
EAR EAS |
TC = 25 TC = 25 |
60 2.3 |
mJ J |
dv/dt | ISIDM, di/dt100 A/s, VDDVDSS TJ150, RG = 2 |
5 |
V/ns |
PD | TC = 25 | 400 | W |
TJ TJM Tstg TL |
1.6 mm (0.063 in.) from case for 10 s | -55 ... +150 150 -55 ... +150 300 |
|
VISOL | 50/60 Hz, RMS t = 1 min | 2500 | V~ |
Weight | 5 | g |
Technical/Catalog Information | IXFR21N100Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 18A |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 10.5A, 10V |
Input Capacitance (Ciss) @ Vds | 5900pF @ 25V |
Power - Max | 350W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | ISOPLUS247? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFR21N100Q IXFR21N100Q |