MOSFET 13 Amps 800V 0.6 Rds
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS 247 | Packaging : | Tube |
Technical/Catalog Information | IXFR15N80Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 7.5A, 10V |
Input Capacitance (Ciss) @ Vds | 4300pF @ 25V |
Power - Max | 250W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 90nC @ 10V |
Package / Case | ISOPLUS247? |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFR15N80Q IXFR15N80Q |