MOSFET
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
| Resistance Drain-Source RDS (on) : | 1.05 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | ISOPLUS 247 | Packaging : | Tube |