IXFR12N100

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Manufacturer: IXYS
Series: HiPerFET™
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V


Parameters:

Technical/Catalog Information	IXFR12N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	250W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR12N100 IXFR12N100