Position: Home  > All Categories> Integrated Circuits (ICs) > IXFR12N100

IXFR12N100

MOSFET N-CH 1000V 10A ISOPLUS247

product image

IXFR12N100 Picture
See larger image
SeekIC No. : 003431401 Detail

IXFR12N100: MOSFET N-CH 1000V 10A ISOPLUS247

IXFR12N100 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFR12N100
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HiPerFET™ Manufacturer: IXYS
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) @ Vgs: 90nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Power - Max: 250W Mounting Type: Through Hole
Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Input Capacitance (Ciss) @ Vds: 2900pF @ 25V
Manufacturer: IXYS
Series: HiPerFET™
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V


Parameters:

Technical/Catalog InformationIXFR12N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR12N100
IXFR12N100



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Memory Cards, Modules
WT32
VTL5C7
LED Products
LM24P20
KCG057QV1DB-G770
Tools
TCP202
G084SN05 V.3
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Undefined Category
VI-B63-IU
X27 589
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more