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IXFR100N25

MOSFET 87 Amps 250V 0.027 Rds

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IXFR100N25: MOSFET 87 Amps 250V 0.027 Rds

IXFR100N25 Data Sheet

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Part Number:
IXFR100N25
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 87 A
Resistance Drain-Source RDS (on) : 0.027 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 87 A
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

 Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 Low drain to tab capacitance(<30pF)
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Rated for Unclamped Inductive Load Switching (UIS)
 Fast intrinsic Rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
250
250
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IL(RMS)
IDM
IAR
TC = 25°C (MOSFET chip capability)
TC = External lead current limit
TC = 25°C, Note 1
TC= 25°C
87
75
400
100
A
A
A
A
EAR
EAS		 TC = 25°C
TC = 25°C
64
3
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2Ω
5
V/ns
PD TC = 25°C
400
W

TJ
TJM
Tstg

  
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS            t = 1 min
2500
V~
Weight  
30
g



Parameters:

Technical/Catalog InformationIXFR100N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C87A
Rds On (Max) @ Id, Vgs27 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9100pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR100N25
IXFR100N25



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