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IXFM75N10

MOSFET 100V 75A

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SeekIC No. : 00164461 Detail

IXFM75N10: MOSFET 100V 75A

IXFM75N10 Data Sheet

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Part Number:
IXFM75N10
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-204AE Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.02 Ohms
Package / Case : TO-204AE


Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic Rectifier


Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls
· Low voltage relays


Parameters:

Technical/Catalog InformationIXFM75N10
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max300W
PackagingTray
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseTO-204, TO-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFM75N10
IXFM75N10



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