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IXFM10N90

Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to protect·Fast intrinsic RectifierApplication·DC-DC converters·Synchronous rectification·Battery char...

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SeekIC No. : 004381540 Detail

IXFM10N90: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to...

IXFM10N90 Data Sheet

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Part Number:
IXFM10N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Description



Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
  - easy to drive and to protect
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control
·Temperature and lighting controls
·Low voltage relays


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C.RG=1M		 900
900		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
pulse width limited by TJM
TC = 25°C

10N90 10
12N90 12
13N90 13
10N90 40
12N90 48
13N90 13
10N90 10
12N90 12
13N90 13		 A
A
A
A
A
A
A
A
A

EAR
 TC = 25°C
 30
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 5 V/ns
PD TC = 25°C 600 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque
1.13/10
 Nm/lb.in.
Weight   TO-204 = 18 g, TO-247 = 6 g g



Description

 


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