IXFM10N90

Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to protect·Fast intrinsic RectifierApplication·DC-DC converters·Synchronous rectification·Battery char...

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IXFM10N90 Picture
SeekIC No. : 004381540 Detail

IXFM10N90: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to...

floor Price/Ceiling Price

Part Number:
IXFM10N90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

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Product Details

Description



Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
  - easy to drive and to protect
·Fast intrinsic Rectifier



Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control
·Temperature and lighting controls
·Low voltage relays



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C.RG=1M
900
900
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
pulse width limited by TJM
TC = 25°C

10N90 10
12N90 12
13N90 13
10N90 40
12N90 48
13N90 13
10N90 10
12N90 12
13N90 13
A
A
A
A
A
A
A
A
A

EAR
TC = 25°C
30

mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 V/ns
PD TC = 25°C 600 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight   TO-204 = 18 g, TO-247 = 6 g g



Description

 


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