IXFM11N80 Selling Leads, Price trend, IXFM11N80 DataSheet download, circuit diagram from SeekIC.com

Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance - easy to drive and to protect• Fast intrinsic RectifierApplication• DC-DC ...

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SeekIC No. : 004381541 Detail

IXFM11N80: Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low packag...

IXFM11N80 Data Sheet

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Part Number:: IXFM11N80
Supply Ability:: 5000

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Upload time: 2024/11/20

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Product Details

Description

Features:

• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier

Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

Specifications

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C.RG=1M	800 800	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C pulse width limited by T_JM T_C = 25°C	11N80 11 13N80 13 11N80 44 13N80 52 11N80 11 13N80 13	A A A A A A
E_AR	T_C = 25°C	30	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	°C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-204 = 18 g, TO-247 = 6 g	g

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IXFM11N80

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