Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance - easy to drive and to protect• Fast intrinsic RectifierApplication• DC-DC ...
IXFM6N90: Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low packag...
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Symbol |
Test Conditions |
Maximum |
Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
900 1000 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
6 24 6 |
A A A |
EAR |
TC = 25°C |
18 |
mJ |
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 2 |
5 |
V/ns |
PD |
TC = 25°C |
180 |
W |
TJ TJM Tstg |
-55 ... +150 150 Tstg -55 ... +150 |
°C °C °C | |
TL |
1.6 mm (0.062 in.) from case for 10 s |
300 |
°C |
Md |
Mounting torque |
1.13/10 |
Nm/lb.in. |
Weight |
TO-204 = 18 g, TO-247 = 6 g |