Position: Home  > All Categories> Integrated Circuits (ICs) > IXFM6N100

IXFM6N100

MOSFET 6 Amps 1000V 2 Rds

product image

IXFM6N100 Picture
See larger image
SeekIC No. : 00159166 Detail

IXFM6N100: MOSFET 6 Amps 1000V 2 Rds

IXFM6N100 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFM6N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-204AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 2 Ohms
Package / Case : TO-204AA


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
900
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
6
24
6
A
A
A
EAR
TC = 25°C
18
mJ
dv/dt
IS   IDM, di/dt   100 A/s, VDD   VDSS,
TJ 150°C, RG = 2 
5
V/ns
PD
TC = 25°C
180
W
TJ
TJM
Tstg
-55 ... +150
150
Tstg -55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g



Parameters:

Technical/Catalog InformationIXFM6N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-204, TO-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFM6N100
IXFM6N100



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Line Protection, Backups
BX0023
A20B-1008-0550
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Undefined Category
VI-B63-IU
X27 589
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more