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IXFM21N50

MOSFET 21 Amps 500V 0.25 Rds

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SeekIC No. : 00159149 Detail

IXFM21N50: MOSFET 21 Amps 500V 0.25 Rds

IXFM21N50 Data Sheet

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Part Number:
IXFM21N50
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-204AE Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.25 Ohms
Package / Case : TO-204AE


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
  - easy to drive and to protect
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays


Parameters:

Technical/Catalog InformationIXFM21N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-204, TO-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFM21N50
IXFM21N50



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