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IXFM13N50

MOSFET 13 Amps 500V 0.4 Rds

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SeekIC No. : 00159247 Detail

IXFM13N50: MOSFET 13 Amps 500V 0.4 Rds

IXFM13N50 Data Sheet

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Part Number:
IXFM13N50
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-204AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-204AA


Parameters:

Technical/Catalog InformationIXFM13N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs400 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-204, TO-3
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFM13N50
IXFM13N50



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