Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification• miniBLOC, with Aluminium nitride isolation• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) ra...
IXFK 27N80: Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification• miniBLOC, with Aluminium nitride isolation• Low RDS (on) HDMOSTM...
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Symbol |
Test conditions |
Maximum |
ratings |
|
IXFK |
IXFN |
|||
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
800 800 |
800 800 |
V |
V | ||||
VGS VGSM |
Continuous Transient |
±20 ±30 |
±20 ±30 |
V |
V | ||||
ID25 IDM IAR |
TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C |
27N80 27 25N80 25 27N80 108 25N80 100 27N80 14 25N80 13 |
27 25 108 100 14 13 |
A |
A | ||||
A | ||||
A | ||||
A | ||||
A | ||||
EAR |
TC = 25°C |
30 |
30 |
mJ |
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 2 |
5 |
5 |
V/ns |
PD |
TC = 25°C |
500 |
520 |
W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C | ||
°C | ||||
°C | ||||
TL |
1.6 mm (0.063 in.) from case for 10 s |
300 |
- |
°C |
VISOL |
50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s |
- - |
2500 3000 |
V~ V~ |
Md |
Mounting torque Terminal connection torque |
0.9/6 - |
1.5/13 1.5/13. |
Nm/lb.in. Nm/lb.in. |
Weight |
10 |
30 |
g |