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IXFK 21N100F

Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifierApplication· DC-DC converters· Switched-mode and resonant-mode power supplies, >500kHz switchin...

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IXFK 21N100F: Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifi...

IXFK 21N100F Data Sheet

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Part Number:
IXFK 21N100F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· RF capable MOSFETs
· Double metal process for low gate resistance
· Unclamped Inductive Switching (UIS) rated
· Low package inductance - easy to drive and to protect
· Fast intrinsic rectifier


Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· 13.5 MHz industrial applications
· Pulse generation
· Laser drivers
· RF amplifiers


Specifications

Symbol
Test Conditions
Maximum
Ratings
VCES
VCGR
 TJ = 25to 150
TJ = 25 to 150; RGE = 1 M
1000
1000
V
V
VGES
VGEM
 Continuous
Transient
±20
±30
V
V
IC25
IDM
IAR
TC = 25
TC = 25, pulse width limited by TJM
TC = 25
21
84
21
A
A
A
EAR
EAS
TC = 25
TC = 25
60
2.5
mJ
J
dv/dt
I IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 2
10
V/ns
PD
 TC = 25
500
W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +150


TL
1.6 mm (0.063 in.) from case for 10 s
300
Md
 Mounting torque TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
TO-264
5
10
g
g




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