IXFK 120N25 Selling Leads, Price trend, IXFK 120N25 DataSheet download, circuit diagram from SeekIC.com

Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifierApplication· DC-DC converters· Battery chargers· Switched-mod...

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SeekIC No. : 004381526 Detail

IXFK 120N25: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive a...

IXFK 120N25 Data Sheet

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Part Number:: IXFK 120N25
Supply Ability:: 5000

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Qty
1~5000

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Processing time
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Upload time: 2024/12/21

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Product Details

Description

Features:

· International standard packages
· Low R_DS _(on) HDMOS^TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic rectifier

Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls

Specifications

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J = 25 to 150 T^J = 25 to 150 ; R_GS = 1 M	250 250	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_D104 I_DM I_AR	T_C = 25°C (MOSFET chip capability) T_C= 104°C (External lead capability) T_C = 25°C, pulse width limited by T_JMT_C = 25	120 75 480 90	A A A A
E_AR	T_C = 25	64	mJ
E_AS	T_C = 25	3	J
dv/dt	I_S I_DM, di/dt100 A/s, V_DDV_DSS, T_J 150 , R_G = 2	5	V/ns
P_D	T_C = 25	560	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.063 in.) from case for 10 s	300
M_d	Mounting torque TO-264	0.7/6	Nm/lb.in.
Weight	PLUS 247 TO-264	6 10	g g

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IXFK 120N25

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