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IXFK90N20Q

MOSFET 200V 90A

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SeekIC No. : 00158409 Detail

IXFK90N20Q: MOSFET 200V 90A

IXFK90N20Q Data Sheet

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Part Number:
IXFK90N20Q
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.022 Ohms
Package / Case : TO-264AA


Features:

•IXYS advanced low Qg process
•International standard packages
•Low RDS (on)
•Unclamped Inductive Switching (UIS) rated
•Fast intrinsic rectifier
•Fast switching
•Molding epoxies meet UL 94 V-0 flammability classification


Parameters:

Technical/Catalog InformationIXFK90N20Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK90N20Q
IXFK90N20Q



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