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IXFK90N20

MOSFET 200V 90A

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SeekIC No. : 00159260 Detail

IXFK90N20: MOSFET 200V 90A

IXFK90N20 Data Sheet

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Part Number:
IXFK90N20
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.023 Ohms
Package / Case : TO-264AA


Features:

 International standard packages
 JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
 miniBLOC with Aluminium nitride isolation
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
 Fast intrinsic Rectifier


Application

 DC-DC converters
 Synchronous rectification
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 Temperature and lighting controls
 Low voltage relays


Specifications

Symbol Test Conditions
Maximum Ratings
IXFK
IXFN
IXFN
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
90N20
200
200
100N20
200
200
106N20
200 V
200 V
VGS
VGEM		 Continuous
Transient
±20
±30
±20
±30
20 V
20 V
ID25
ID80
IDM		 TC = 25oC, Chip capability
TC = 80oC, limited by external leads
TC = 25oC, pulse width limited by TJM
90
76
360
100
-
400
106 A
A
424 A
IAR TC = 25°C
50

50

A

EAR
dv/dt		 TC = 25oC
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω
30
5

30
5

30 mJ
5 V/ns

PD TC = 25°C
500
520
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
-
-

2500
3000

V~
V~

Md Mounting torque
Terminal connection torque
0.9/6
-
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight

10
30
g



Parameters:

Technical/Catalog InformationIXFK90N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs23 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs380nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK90N20
IXFK90N20



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