IXFK80N20Q Selling Leads, Price trend , Ixys, IXFK80N20Q DataSheet download, circuit diagram from SeekIC.com

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IXFK80N20Q: MOSFET 80 Amps 200V 0.03 Rds

IXFK80N20Q Data Sheet

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Part Number:: IXFK80N20Q
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.028 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264AA	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : TO-264AA

Parameters:

Technical/Catalog Information	IXFK80N20Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	28 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4600pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK80N20Q IXFK80N20Q

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IXFK80N20Q

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