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IXFK80N20

MOSFET 80 Amps 200V 0.03 Rds

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SeekIC No. : 00159208 Detail

IXFK80N20: MOSFET 80 Amps 200V 0.03 Rds

IXFK80N20 Data Sheet

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Part Number:
IXFK80N20
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.03 Ohms
Package / Case : TO-264AA


Features:

• International standard packages
• Molding epoxies meet UL 94 V-0 flammability classification
• Low RDS (on) HDMOSTM process
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Parameters:

Technical/Catalog InformationIXFK80N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs30 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5900pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs280nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK80N20
IXFK80N20



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