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IXFK60N55Q2

MOSFET 60 Amps 550V 0.09 Rds

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SeekIC No. : 00158220 Detail

IXFK60N55Q2: MOSFET 60 Amps 550V 0.09 Rds

IXFK60N55Q2 Data Sheet

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Part Number:
IXFK60N55Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 550 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.088 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 60 A
Drain-Source Breakdown Voltage : 550 V
Resistance Drain-Source RDS (on) : 0.088 Ohms
Package / Case : TO-264AA


Features:

Double metal process for low gate resistance
International standard packages
Epoxy meet UL 94 V-0, flammability classification
Avalanche energy and current rated
Fast intrinsic Rectifier


Parameters:

Technical/Catalog InformationIXFK60N55Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs88 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6900pF @ 25V
Power - Max735W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK60N55Q2
IXFK60N55Q2



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