IXFK60N55Q2 Selling Leads, Price trend , Ixys, IXFK60N55Q2 DataSheet download, circuit diagram from SeekIC.com

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IXFK60N55Q2: MOSFET 60 Amps 550V 0.09 Rds

IXFK60N55Q2 Data Sheet

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Part Number:: IXFK60N55Q2
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/8/13

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	550 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	60 A
Resistance Drain-Source RDS (on) :	0.088 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264AA	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 60 A
Drain-Source Breakdown Voltage : 550 V
Resistance Drain-Source RDS (on) : 0.088 Ohms
Package / Case : TO-264AA

Features:

Double metal process for low gate resistance
International standard packages
Epoxy meet UL 94 V-0, flammability classification
Avalanche energy and current rated
Fast intrinsic Rectifier

Parameters:

Technical/Catalog Information	IXFK60N55Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	88 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6900pF @ 25V
Power - Max	735W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK60N55Q2 IXFK60N55Q2

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IXFK60N55Q2

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