IXFK55N50 Selling Leads, Price trend , Ixys, IXFK55N50 DataSheet download, circuit diagram from SeekIC.com

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IXFK55N50: MOSFET 500V 55A

IXFK55N50 Data Sheet

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Part Number:: IXFK55N50
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/11/20

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	55 A
Resistance Drain-Source RDS (on) :	0.09 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264AA	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 55 A
Package / Case : TO-264AA

Features:

• International standard packages
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Low R_DS _(on) HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Parameters:

Technical/Catalog Information	IXFK55N50
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	90 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9400pF @ 25V
Power - Max	625W
Packaging	Tube
Gate Charge (Qg) @ Vgs	330nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK55N50 IXFK55N50

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IXFK55N50

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