MOSFET N-CH 550V 48A TO-264AA
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Series: | HiPerFET™ | Manufacturer: | IXYS | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 550V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 48A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 24A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4.5V @ 8mA | Gate Charge (Qg) @ Vgs: | 330nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 8900pF @ 25V | ||
Power - Max: | 560W | Mounting Type: | Through Hole | ||
Package / Case: | TO-264-3, TO-264AA | Supplier Device Package: | TO-264AA |
Technical/Catalog Information | IXFK48N55 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 550V |
Current - Continuous Drain (Id) @ 25° C | 48A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 8900pF @ 25V |
Power - Max | 560W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 330nC @ 10V |
Package / Case | TO-264AA |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFK48N55 IXFK48N55 |