IXFK48N50Q

MOSFET 48 Amps 500V 0.1 Rds

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SeekIC No. : 00158288 Detail

IXFK48N50Q: MOSFET 48 Amps 500V 0.1 Rds

floor Price/Ceiling Price

Part Number:
IXFK48N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : TO-264AA


Features:

• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification



Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls



Parameters:

Technical/Catalog InformationIXFK48N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 7000pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK48N50Q
IXFK48N50Q



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