MOSFET 48 Amps 500V 0.1 Rds
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Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 48 A | ||
Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-264AA | Packaging : | Tube |
Technical/Catalog Information | IXFK48N50Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 48A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 7000pF @ 25V |
Power - Max | 500W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 190nC @ 10V |
Package / Case | TO-264AA |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFK48N50Q IXFK48N50Q |