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IXFK44N55Q

MOSFET 44 Amps 550V

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SeekIC No. : 00153912 Detail

IXFK44N55Q: MOSFET 44 Amps 550V

IXFK44N55Q Data Sheet

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Part Number:
IXFK44N55Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 550 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 44 A
Drain-Source Breakdown Voltage : 550 V
Resistance Drain-Source RDS (on) : 0.12 Ohms
Packaging : Box
Package / Case : TO-264AA


Features:

· IXYS advanced low Qg process
· Low gate charge and capacitances
   - easier to drive
   - faster switching
· International standard packages
· Low RDS (on)
· Rated for unclamped Inductive loads witching (UIS) rated
· Molding epoxies meet UL 94 V-0 flammability classification


Application

· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls


Specifications

Symbol
Test Conditions
Maximum
Ratings
VCES
VCGR
 TJ = 25to 150
TJ = 25 to 150; RGE = 1 M
550
550
V
V
VGES
VGEM
 Continuous
Transient
±20
±30
V
V
IC25
IDM
IAR
TC = 25
TC = 25, pulse width limited by TJM
TC = 25
44
176
44
A
A
A
EAR
EAS
TC = 25
TC = 25
60
2.5
mJ
J
dv/dt
I IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 2
10
V/ns
PD
 TC = 25
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150


TL
1.6 mm (0.063 in.) from case for 10 s
300
Md
 Mounting torque TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g




Parameters:

Technical/Catalog InformationIXFK44N55Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs120 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 6400pF @ 25V
Power - Max500W
PackagingBulk
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK44N55Q
IXFK44N55Q



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