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IXFK44N50F

MOSFET HiperRF Power MOSFET 500V, 44A, 0.12 Ohm

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SeekIC No. : 00164402 Detail

IXFK44N50F: MOSFET HiperRF Power MOSFET 500V, 44A, 0.12 Ohm

IXFK44N50F Data Sheet

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Part Number:
IXFK44N50F
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 44 A
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.12 Ohms
Package / Case : TO-264AA


Features:

• RF capable MOSFETs
• Double metal process for low gate resistance
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic rectifier


Application

• DC-DC converters
• Switched-mode and resonant-mode power supplies, >500kHz switching
• DC choppers
• 13.5 MHz industrial applications
• Pulse generation
• Laser drivers
• RF amplifiers


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