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IXFK32N60

MOSFET 32 Amps 600V

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SeekIC No. : 00159293 Detail

IXFK32N60: MOSFET 32 Amps 600V

IXFK32N60 Data Sheet

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Part Number:
IXFK32N60
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 32 A
Package / Case : TO-264AA


Features:

· International standard packages
· JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
· Fast intrinsic Rectifier


Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays


Specifications

Symbol Test Conditions IXFK
170N10		 IXFN
170N10		 Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C		 600
600		 600
600		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 ±20
±30		 V
V
ID25
IDM
IAR
 TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
32N60 32
36N60 36
32N60 128
36N60 144
20		 32
36
128
144
20		 A
A
A
A
A


EAR
TC = 25°C 60 60
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 5 5 V/ns
PD TC = 25°C 500 520 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 - °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s		 -
-		 2500
3000		 V~
V~
Md
 Mounting torque
Terminal connection torque
 0.9/6
-
 1.5/13
1.5/13		 Nm/lb.in.
Nm/lb.in.
Weight   10 30 g



Parameters:

Technical/Catalog InformationIXFK32N60
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs325nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK32N60
IXFK32N60



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