IXFK32N100P Selling Leads, Price trend , Ixys, IXFK32N100P DataSheet download, circuit diagram from SeekIC.com

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IXFK32N100P: MOSFET 32 Amps 1000V 0.32 Rds

IXFK32N100P Data Sheet

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Part Number:: IXFK32N100P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	32 A
Resistance Drain-Source RDS (on) :	0.32 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 32 A
Package / Case : TO-264
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.32 Ohms

Parameters:

Technical/Catalog Information	IXFK32N100P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	320 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	14200pF @ 25V
Power - Max	960W
Packaging	Tube
Gate Charge (Qg) @ Vgs	225nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK32N100P IXFK32N100P

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IXFK32N100P

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