IXFK30N110P Selling Leads, Price trend , Ixys, IXFK30N110P DataSheet download, circuit diagram from SeekIC.com

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IXFK30N110P: MOSFET 30 Amps 1100V 0.3600 Rds

IXFK30N110P Data Sheet

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Part Number:: IXFK30N110P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1100 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	0.36 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-264	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.36 Ohms
Package / Case : TO-264
Drain-Source Breakdown Voltage : 1100 V

Parameters:

Technical/Catalog Information	IXFK30N110P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1100V (1.1kV)
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	360 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	13600pF @ 25V
Power - Max	960W
Packaging	Tube
Gate Charge (Qg) @ Vgs	235nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK30N110P IXFK30N110P

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IXFK30N110P

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