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IXFK26N60Q

MOSFET 28 Amps 600V 0.25 Rds

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SeekIC No. : 00154504 Detail

IXFK26N60Q: MOSFET 28 Amps 600V 0.25 Rds

IXFK26N60Q Data Sheet

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Part Number:
IXFK26N60Q
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 26 A
Package / Case : TO-264AA


Features:

· Low gate charge
· International standard packages
·Epoxy meet UL 94 V-0, flammability classification
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Avalanche energy and current rated
· Fast intrinsic Rectifier


Application

· Easy to mount
· Space savings
· High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 600
600		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
 26
104
26		 A
A
A


EAR
EAS

 TC = 25°C
TC = 25°C		 45
1.5		 mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque
 10.9/6
 Nm/lb.in.
Weight PLUS-247
TO-264		 6
10		 g
g



Parameters:

Technical/Catalog InformationIXFK26N60Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK26N60Q
IXFK26N60Q



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